Rad hard, 1 and 2Mb parallel interface F-RAM memory devices are space qualified
EP&T Magazine
Semiconductors chip F-RAM ferroelectric-RAM INFINEON memory nonvolatile Rad-hardINFINEON Radiation-hardened (rad hard) 1 and 2Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory devices feature enhanced reliability and endurance, with up to 120 years of data retention at 85-degree Celsius, along with random access and full memory write at bus speeds. F-RAM devices are intrinsically rad hard, and the technology is suitable for the evolving mission requirements of space-based applications that historically have used slower, less rugged EEPROM nonvolatile storage devices. Features compared to alternatives include faster memory random access, improved data security with instant non-volatile write technology and low power, with low programming voltage down to 2V and maximum operating current of 20mA.
