RF Power GaN boosts efficiency, performance, bandwidth

FREESCALE AFG25HW355S RF power amplifier built using gallium nitride (GaN) technology, provides 350W, high-performance-in-package (HiP). The 2:1 asymmetric device includes performance targets: 2.3GHz-2.7GHz; 56dBm peak power; 50% efficiency; 16 dB gain; and NI-780 packaging.

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